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Sequential access memory. In computing, sequential access memory ( SAM) is a class of data storage devices that read stored data in a sequence. This is in contrast to random access memory (RAM) where data can be accessed in any order. Sequential access devices are usually a form of magnetic storage or optical storage. [1] [2]
Virtual Storage Access Method. Virtual Storage Access Method ( VSAM) [1] is an IBM direct-access storage device (DASD) file storage access method, first used in the OS/VS1, OS/VS2 Release 1 (SVS) and Release 2 (MVS) operating systems, later used throughout the Multiple Virtual Storage (MVS) architecture and now in z/OS.
MOS memory, based on MOS transistors, was developed in the late 1960s, and was the basis for all early commercial semiconductor memory. The first commercial DRAM IC chip, the 1K Intel 1103, was introduced in October 1970. Synchronous dynamic random-access memory (SDRAM) later debuted with the Samsung KM48SL2000 chip in 1992.
A solid-state drive (SSD) provides secondary storage for relatively complex systems including personal computers, embedded systems, portable devices, large servers and network-attached storage (NAS). To satisfy such a wide range of uses, SSDs are produced with various features, capacities, interfaces and physical sizes and layouts.
ISAM. ISAM, an acronym for Indexed Sequential Access Method, is a method for creating, maintaining, and manipulating computer files of data so that records can be retrieved sequentially or randomly by one or more keys. Indexes of key fields are maintained to achieve fast retrieval of required file records in indexed files.
Hierarchical storage management ( HSM ), also known as tiered storage, [1] is a data storage and data management technique that automatically moves data between high-cost and low-cost storage media. HSM systems exist because high-speed storage devices, such as solid-state drive arrays, are more expensive (per byte stored) than slower devices ...
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